Proceedings/Recueil Des Communications Solid State Phenomena Année : 2024

Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD

Résumé

The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4°off substrates was studied. Depending on the polarity of the substrate, different results were obtained. On Si face, the direct CVD growth at 1600°C under a mixture of BCl 3 +C 3 H 8 systematically led to polycrystalline B x C films, whatever the C/B ratio in the gas phase. On the C face, heteroepitaxial growth was obtained for C/B ratios = 12 or higher with a step bunched morphology. If a boridation step (10 min at 1200°C under BCl 3 flow) was used before the CVD growth, then heteroepitaxy was successful on both substrate polarities. To explain these results, a mechanism is proposed which involves the nature of the chemical bonds at the early stage of nucleation. It is suggested that a full B coverage of the SiC surface should favor the nucleation of the B-rich (0001) plane of B x C, promoting thus the heteroepitaxial growth along this direction.

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Dates et versions

hal-04726099 , version 1 (09-10-2024)

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François Cauwet, Yamina Benamra, Laurent Auvray, J. Andrieux, Gabriel Ferro. Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD. International conference on silicon carbide and related materials 2023, Solid State Phenomena, 362, pp.1-6, 2024, ⟨10.4028/p-uFrJ54⟩. ⟨hal-04726099⟩
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