Communication Dans Un Congrès Année : 2024

External Net Gain in Monolithically Integrated Si3N4-Al2O3:Er3+ Spiral Waveguide Amplifiers

Résumé

External net gain is demonstrated in the C-band using reactively sputtered Al2O3:Er3+ spiral waveguide amplifiers monolithically integrated with Si3N4. On-chip powers up to 50 mW are measured, with >30 dB internal gain at 1532 nm and external gain of similar to 5 dB from 1530-1560 nm for a 20 cm waveguide with an erbium concentration of 1.5 ions/cm(3).
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Dates et versions

hal-04720929 , version 1 (04-10-2024)

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Citer

Dawson B. Bonneville, Carlos E. Osornio Martinez, Ivo Hegeman, Quentin Coulaud, Meindert Dijkstra, et al.. External Net Gain in Monolithically Integrated Si3N4-Al2O3:Er3+ Spiral Waveguide Amplifiers. 25th European Conference on Integrated Optics (ECIO), Jun 2024, Aachen, Germany. ⟨10.1007/978-3-031-63378-2_9⟩. ⟨hal-04720929⟩
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