Single‐Phase Growth, Stabilization, and Electrical Properties of B Phase VO 2 Films Grown on Mica by Reactive Magnetron Sputtering
Résumé
The VO$_2$ metastable (B) phase is of interest for applications in temperature sensing, bolometry, and Li‐ion batteries. However, single‐phase growth of thin films of this metastable phase is a challenge because vanadium oxide exhibits many polymorphs and the VO$_2$ stable (M1) phase is usually present as a secondary phase. Additionally, the phase transition at 350°C in the (B) phase severely narrows the processing window for achieving phase‐pure films. Here, single‐phase growth of 5‐to 50‐nm thick VO$_2$ (B) films on muscovite, mica, by pulsed direct‐current reactive magnetron sputtering at 400 °C is demonstrated. The films are phase‐pure and exhibit a high density of 4.05 g cm$^{−3}$ and low resistivity of about 50 mΩcm at 30 °C. Increasing the film thickness to 100 nm results in a V$_2$O$_5$‐capped VO$_2$ (B) film with a resistivity of 8000 mΩcm. These results indicate that the stability of the VO$_2$ (B) phase is sensitive to in situ annealing during deposition. These findings should serve as a basis to design processes to exclusively obtain phase‐pure VO$_2$ (B) films.
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