Improvement and optimization of Cu 2 ZnSn(S1-xSex)4 structure for optoelectronic applications - Archive ouverte HAL
Article Dans Une Revue Chalcogenide Letters Année : 2024

Improvement and optimization of Cu 2 ZnSn(S1-xSex)4 structure for optoelectronic applications

Résumé

The use of semiconductors based on abundant and less expensive materials in photovoltaic industry has grown since electricity consumption has increased, alloys such as Cu 2 ZnSn(S 1-x Se x ) 4 have recently attracted attention, due to its structural, optical and electronic properties which make it a very promising candidate as an absorber layer in photovoltaic applications. The lattice mismatch of Cu 2 ZnSn(S 1-x Se x ) 4 with Cu 2 NiGeS 4 as substrate for solar cell architecture reveals that low Se content (0.1≤x≤0.4) is favorable, and thus, by reducing Se content from 40 to 10% induces a decrease in optical parameters such as refractive index from 5.475 to 3.834 for near-infrared wavelengths, and both extinction and absorption coefficients are from 0.478 to 0.211 and from 7.956×10 4 to 6.912×10 4 cm -1 , respectively, for almost along the visible spectrum. Additionally, the bandgap energy of Cu 2 ZnSn(S 1-x Se x ) 4 in kesterite structure increases from 1.267 to 1.442 eV at room temperature, while the compressive strain of the epitaxial layer reduces from 3.93 to 2.39% and from 4.62 to 3.17% on the growth plane and following the direction of growth, respectively.

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Dates et versions

hal-04698466 , version 1 (16-09-2024)

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A Skender, A Aissat, Jean-Pierre Vilcot. Improvement and optimization of Cu 2 ZnSn(S1-xSex)4 structure for optoelectronic applications. Chalcogenide Letters, 2024, 21 (8), pp.651-653. ⟨10.15251/CL.2024.218.651⟩. ⟨hal-04698466⟩
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