Wire bonding failure characterization of an IGBT based power module through impedance analysis - Archive ouverte HAL
Communication Dans Un Congrès Année : 2024

Wire bonding failure characterization of an IGBT based power module through impedance analysis

Stéphane Baffreau
  • Fonction : Auteur
  • PersonId : 1415198
Guillaume Vine
Anusha Gopishetti
  • Fonction : Auteur
  • PersonId : 1415199
Thanh Long Le
  • Fonction : Auteur
  • PersonId : 1270414

Résumé

This study deals with the development of a wide-frequency-band characterization for failure analysis of power modules, focusing on a specific IGBT packaging. It is highlighted that different characteristics of the IGBT and the packaging can be distinguished depending on the frequency band analyzed, enabling the detection of potential failure modes. Particularly, for the power bond-wire lift-off mechanism, the paper emphasizes the importance of considering high-frequency analysis above 200 MHz. It is enabled through the definition of a failure indicator, demonstrating the ability to highlight partial failures as well as to localize them.
Fichier principal
Vignette du fichier
preprint_draft_ESREF_2024.pdf (484.6 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04696717 , version 1 (13-09-2024)

Identifiants

  • HAL Id : hal-04696717 , version 1

Citer

Paul-Etienne Vidal, Stéphane Baffreau, Guillaume Vine, Anusha Gopishetti, Thanh Long Le. Wire bonding failure characterization of an IGBT based power module through impedance analysis. ESREF 2024 - 35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2024, PARMA, Italy. ⟨hal-04696717⟩
51 Consultations
77 Téléchargements

Partager

More