High coherence broadly tunable semiconductor laser: inhibited versus strong non-linear light matter interaction - Archive ouverte HAL
Communication Dans Un Congrès Année : 2024

High coherence broadly tunable semiconductor laser: inhibited versus strong non-linear light matter interaction

Résumé

We demonstrate two highly coherent tunable high power laser concepts, based on a III-V semiconductor VECSEL technology, operating in the 1µm wavelength range. We report experimentally and theoretically the existence of deterministic dynamics of a coherent semiconductor laser field, with a route to robust single-frequency operation exhibiting broad nonlinear frequency pulling far above the thermally-assisted conventional tuning range. Thanks to a complementary design, we demonstrate an inhibited laser state exhibiting high power, high spatial and temporal coherence under ultralow light matter interaction, overcoming fundamental and technical limitations of common on the shelf laser technology, like quantum, electronic and thermal noise, as well as thermal lensing induced wave aberration.
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Dates et versions

hal-04695622 , version 1 (12-09-2024)

Identifiants

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Mohamed Nadrani, Baptiste Chomet, Adrian Bartolo, Grégoire Beaudoin, Konstantinos Pantzas, et al.. High coherence broadly tunable semiconductor laser: inhibited versus strong non-linear light matter interaction. Semiconductor Lasers and Laser Dynamics XI, Apr 2024, Strasbourg, France. pp.32, ⟨10.1117/12.3022556⟩. ⟨hal-04695622⟩
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