Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2024

Post-growth tuning of detachable Ge membranes adhesion strength via porous Ge transformation

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hal-04654912 , version 1 (20-07-2024)

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Ahmed Ayari, Firas Zouaghi, Bouraoui Ilahi, Tadeáš Hanuš, Jinyoun Cho, et al.. Post-growth tuning of detachable Ge membranes adhesion strength via porous Ge transformation. Materials Science in Semiconductor Processing, 2024, 180, pp.108563. ⟨10.1016/j.mssp.2024.108563⟩. ⟨hal-04654912⟩
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