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Article Dans Une Revue Physical Review B Année : 2024

Surface recombination and out-of-plane diffusivity of free excitons in hexagonal boron nitride

Eli Janzen
  • Fonction : Auteur
James H. Edgar
  • Fonction : Auteur
Takashi Taniguchi
Kenji Watanabe

Résumé

We present an experimental protocol using cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of two-dimensional (2D) materials. The protocol is then applied at room and at cryogenic temperatures to four bulk hexagonal boron nitride crystals grown by different synthesis routes. The exciton diffusivity depends on the sample quality but not on the temperature, indicating it is limited by defect scattering even in the best quality crystals. The lower limit for the diffusivity by phonon scattering is 0.2 cm2s-1. Diffusion lengths were as much as 570 nm. Finally, the surface recombination velocity exceeds 105cm2s-1, at a level similar to silicon or diamond. This result reveals that surface recombination could strongly limit light-emitting devices based on 2D materials.

Domaines

Matériaux

Dates et versions

hal-04615308 , version 1 (18-06-2024)

Identifiants

Citer

Sébastien Roux, Etienne Carré, Annick Loiseau, Christophe Arnold, Julien Barjon, et al.. Surface recombination and out-of-plane diffusivity of free excitons in hexagonal boron nitride. Physical Review B, 2024, 109 (15), ⟨10.1103/PhysRevB.109.155305⟩. ⟨hal-04615308⟩
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