Molecular dynamics simulation of the interaction of an Ar/CH<sub>4</sub> plasma with a surface: Growth, structure, and sputtering of the deposited C:H films - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Plasma Processes and Polymers Année : 2024

Molecular dynamics simulation of the interaction of an Ar/CH4 plasma with a surface: Growth, structure, and sputtering of the deposited C:H films

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Molecular dynamics simulations were performed to investigate the growth of hydrocarbon films with a surface at temperatures from 300 to 1000 K. The results show that C$_2$H is the main precursor of film growth. The formed C:H films are mainly unsaturated and dominated by double bonds and CN$^3$ carbon atoms. The evolution of the C:H film is considered under the bombardment of the two major ions (Ar$^+$ and C$_2$H$_3^+$) with energies ranging from 50 to 100 eV. Film sputtering is significant above 50 eV, while at lower energies, the atoms of the C$_2$H$_3^+$ ions can be incorporated and contribute to the growth.
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hal-04609808 , version 1 (12-06-2024)

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Glenn Otakandza Kandjani, Pascal Brault, Maxime Mikikian, Armelle Michau, Khaled Hassouni. Molecular dynamics simulation of the interaction of an Ar/CH4 plasma with a surface: Growth, structure, and sputtering of the deposited C:H films. Plasma Processes and Polymers, inPress, ⟨10.1002/ppap.202400084⟩. ⟨hal-04609808⟩
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