Système de gestion optimale du temps-mort intégré au gate-driver CMOS grâce à la mesure du courant de grille pour les MOSFETs SiC
Résumé
This paper presents the design of an innovative gate control integrated circuit to meet the new challenges associated with the use of SiC MOSFETs. This circuit integrates an optimal dead-time management function based on the internal measurement of the gate current. The experimental results show detection of the ideal dead-time duration with a delay of less than 20ns, thus enabling considerably reduce losses and degradation during this phase of operation.
Domaines
Sciences de l'ingénieur [physics]Origine | Fichiers produits par l'(les) auteur(s) |
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