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Article Dans Une Revue Microelectronics Reliability Année : 2023

DC to AC analysis of HC vs. BTI damage in N-EDMOS used in single photon avalanche diode cell

Résumé

N-channel Extended Drain Metal Oxide Semiconductor (EDMOS) device is analysed through its sensitivity to Hot- Carrier (HC), hot hole (HH) injections and Positive Bias Temperature (PBT) instability degradation using accelerated DC to AC lifetime technique. EDMOS device is optimized for an effective gate-length Leff = 0.25 μm, with a gate-oxide thickness Tox = 5 nm operating at a frequency of 3 MHz at nominal supply voltage VDD = 5 V. The device is used in a mixed structure dedicated to 3D integration of Single Photon Avalanche Diode (SPAD). We show that HC reliability of EDMOS transistor can be obtained using worst-case DC accelerating degradation at high temperature transferred to the real AC waveforms applied to N-channel device placed into the SPAD cell. This allows to deduce the AC device lifetime obtained from DC stressing using a quasi-static approach considering the dominant degradation mechanism at condition of maximum gate-voltage VGSmax. This is explained by the optimized structure in Tox, VDD and lateral isolation where PBT, Off mode and recovery effects have limited impacts during switching operation of the N-EDMOS device used in SPAD circuit environment
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Dates et versions

hal-04604637 , version 1 (07-06-2024)

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H. Pitard, Alain Bravaix, X. Federspiel, R. Fillon, F. Cacho. DC to AC analysis of HC vs. BTI damage in N-EDMOS used in single photon avalanche diode cell. Microelectronics Reliability, 2023, 150, pp.115111. ⟨10.1016/j.microrel.2023.115111⟩. ⟨hal-04604637⟩
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