A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited) - Archive ouverte HAL Access content directly
Conference Papers Year : 2024

A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited)

Mustafa Shqair
Emmanuel Sarraute
Frédéric Richardeau

Abstract

As a follow-up to our previous work, the 2D transient Multiphysics electrothermal-mechanical and metallurgical model of a 1.2kV-80mOhm gate-planar SiC MOSFET power chip in a single FEM software, created previously by the authors, has been developed. This model aims to quantify the short-circuit (SC) critical time and energy density of attaining the local dielectric interlayer (ILD) strength and the Al source-metal solidus-liquidus phase transition at elevated temperatures. The novelty of this extended model is considering non-linear electrothermal and elastoplastic material property laws over a wide range of temperatures. Repetitive experimental SC events were carried out to verify the gate-aging occurrence in accordance with the critical values extracted from the proposed model.
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hal-04579761 , version 1 (18-05-2024)

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Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau. A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited). 2024 IEEE International Reliability Physics Symposium (IRPS), Apr 2024, Grapevine - Dallas, United States. pp.7B.2-1-7B.2-8, ⟨10.1109/IRPS48228.2024.10529493⟩. ⟨hal-04579761⟩
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