Low-temperature joining of semiconductor substrates and thin layers on solid and flexible wafers by solid-liquid inter-diffusion bonding using a low-thickness Ni-Sn system - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Low-temperature joining of semiconductor substrates and thin layers on solid and flexible wafers by solid-liquid inter-diffusion bonding using a low-thickness Ni-Sn system

Résumé

In this study, we investigate the conditions of bonding by implementing Transient Liquid Phase of the metal technique in order to secure a flexible polyimide sheet to different semiconductor substrates (Si, SOI, InP). We test the TLP bonding using Ni and Sn as filler and parental metals at low thicknesses (from 300 nm/600 nm to 1.5 µm/3 µm, for Ni/Sn respectively). At these conditions, we highlight a discrepancy with the expected behavior, especially above 280°C.
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Dates et versions

hal-04566973 , version 1 (02-05-2024)

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Martina Zanetti, Alexandre Danescu, Jean-Louis Leclercq, Philippe Regregny, Maxime Darnon, et al.. Low-temperature joining of semiconductor substrates and thin layers on solid and flexible wafers by solid-liquid inter-diffusion bonding using a low-thickness Ni-Sn system. DTIP Malta 2023, May 2023, La Valletta, Malta. ⟨10.1109/DTIP58682.2023.10267939⟩. ⟨hal-04566973⟩
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