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Article Dans Une Revue Japanese Journal of Applied Physics Année : 1994

Comparison of Dry Development Techniques using O 2 and SO 2 /O 2 Low-Pressure Plasmas

Michel Pons
  • Fonction : Auteur
Olivier Joubert
  • Fonction : Auteur
Christine Martinet
Jacques Pelletier
  • Fonction : Auteur
Jean-Pierre Panabière
  • Fonction : Auteur
André Weill
  • Fonction : Auteur

Résumé

A parametric study of the pattern transfer step in a trilevel resist system using oxygen-based plasmas has been performed using a distributed electron cyclotron resonance reactor with independent rf biasing. In pure oxygen plasmas, critical dimension loss is always present. The mechanisms most likely to be responsible for these defects during the pattern transfer process are presented and discussed. A novel plasma etching process based on sidewall passivation by sulfur is proposed using SO 2 /O 2 mixtures. Perfect anisotropy with negligiable critical dimension loss is obtained at room temperature.
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Dates et versions

hal-04552921 , version 1 (19-04-2024)

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Michel Pons, Olivier Joubert, Christine Martinet, Jacques Pelletier, Jean-Pierre Panabière, et al.. Comparison of Dry Development Techniques using O 2 and SO 2 /O 2 Low-Pressure Plasmas. Japanese Journal of Applied Physics, 1994, 33 (2R), pp.991. ⟨10.1143/JJAP.33.991⟩. ⟨hal-04552921⟩
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