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Article Dans Une Revue Applied Physics Letters Année : 1995

Infrared evidence for inhomogeneity in SiO2 films grown by plasma assisted oxidation of Si

C. Martinet
R. Devine
  • Fonction : Auteur

Résumé

The longitudinal optic vibrational mode associated with the asymmetric stretch of the bridging oxygen atom has been studied in amorphous SiO2 grown by plasma assisted oxidation of Si. In films ≤70 nm thick the mode is observed displaced by −6 cm−1 with respect to the bulk value (1256 cm−1). Deconvolution of the spectra combined with chemical etchback of the films shows that they are inhomogeneous, the peak shift increasing to −12 cm−1 near the Si/SiO2 interface in films thicker than ∼20 nm.
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hal-04552908 , version 1 (19-04-2024)

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C. Martinet, R. Devine. Infrared evidence for inhomogeneity in SiO2 films grown by plasma assisted oxidation of Si. Applied Physics Letters, 1995, 67 (18), pp.2696-2698. ⟨10.1063/1.114296⟩. ⟨hal-04552908⟩
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