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Article Dans Une Revue physica status solidi (c) Année : 2007

Thermal evolution of vacancy defects induced in 12 MeV H + irradiated 6H‐SiC single crystals

X. Kerbiriou
  • Fonction : Auteur
M.‐f. Barthe
  • Fonction : Auteur
Pierre Desgardin

Résumé

Abstract In this work positron annihilation lifetime spectroscopy (PALS) has been used to investigate the evolution of the vacancy defects induced in 12 MeV H + irradiated SiC as a function of the temperature. The irradiation has been performed at room temperature at a fluence of 4 x 10 16 cm –2 in 6H‐SiC single crystals using the CERI‐Orléans cyclotron. Thermal treatments have been performed under an argon flux from 300 °C up to 1050°C. The positron lifetime has been measured as a function of the temperature in the range 15–600 K. After irradiation, positrons detect negative ions and two types of vacancy defects: V Si monovacancies and V Si –V C divacancies. After annealing, the lifetime behaviour as a function of the measurement temperature changes indicating different annealing stages. An increase of the long lifetime component is specially observed whereas the corresponding intensity decreases. These changes are correlated to the migration of V Si and the clustering with V Si –V C to form a new vacancy defect. The lifetime of this new defect has been determined and is equal to 235 ± 2 ps. We propose that it is related to V Si –V C –V Si . (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Dates et versions

hal-04517353 , version 1 (22-03-2024)

Identifiants

Citer

X. Kerbiriou, M.‐f. Barthe, A. Gentils, Pierre Desgardin. Thermal evolution of vacancy defects induced in 12 MeV H + irradiated 6H‐SiC single crystals. physica status solidi (c), 2007, 4 (10), pp.3650-3653. ⟨10.1002/pssc.200675796⟩. ⟨hal-04517353⟩

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