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Article Dans Une Revue European Journal of Theoretical and Applied Sciences Année : 2024

Critical Impurity Density in the Mott Metal-Insulator Transition, obtained in the n(p)-Type Degenerate

Résumé

By basing on the same physical model and treatment method, as used in our recent works (Van Cong, 2024; 2023; 2023), we investigate the critical impurity density in the metal-insulator transition (MIT), obtained in the n(p)-type degenerate Si1−xGex- crystalline alloy, 0≤x≤1, and also applied to determine the optical band gap, being due to the effects of the size of donor (acceptor) d(a)-radius, rd(a), the x-Ge concentration, the temperature T, and finally the high d(a)-density, N, assuming that all the impurities are ionized even at T=0 K. In such the n(p)-type degenerate Si1−xGex- crystalline alloy, we will determine: (i)-the critical impurity density
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Dates et versions

hal-04517158 , version 1 (22-03-2024)

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Citer

Huynh van Cong. Critical Impurity Density in the Mott Metal-Insulator Transition, obtained in the n(p)-Type Degenerate. European Journal of Theoretical and Applied Sciences, 2024, 2 (2), pp.130-148. ⟨10.59324/ejtas.2024.2(2).12⟩. ⟨hal-04517158⟩

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