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Article Dans Une Revue Journal of Ovonic Research Année : 2024

Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells

Résumé

This paper focuses on studying and simulating a GaAs1-xPx/Si1-yGey/Ge triple-junction solar cell structure. First, the strain and the bandgap energy associated to the SiGe layer have been studied. The optimal germanium concentration is 0.88 with a strain around 0.45%. Then, the phosphor concentration effect on the strain and the bandgap energy of the upper layer GaAs1-xPx/Si0.12Ge0.88 has been optimized. At room temperature, the optimal output parameter reach Jsc=34.41mA/cm2 , Voc=1.27V, FF=88.42% and η=38.45% for an absorber thickness of 4.5µm and x=0.47, with a strain that doesn’t exceed 1.5%. This study has enabled us to design a high-efficiency, low cost 3J solar cell.

Dates et versions

hal-04494462 , version 1 (07-03-2024)

Identifiants

Citer

A. Azzououm, A. Aissat, Jean-Pierre Vilcot. Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells. Journal of Ovonic Research, 2024, 20 (1), pp.75-84. ⟨10.15251/JOR.2024.201.75⟩. ⟨hal-04494462⟩
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