In this article, a two-stage reconfigurable X-Band number and the width of the gate fingers of the GaN active low noise amplifier is presented. This is the first time that an LNA device. This compromise determines two crucial parameters is presented which can be tuned from a high sensitivity (low noise which are the noise figure (NF50:) and the linearity figure) but medium input saturated power configuration, to a slightly degraded noise figure but high input saturated power (compression point at 1dB, P1dB) of the LNA. The configuration. This robust LNA, developed with the D01GH importance of decreasing the noise figure (NF) to increase the technology from OMMIC, meets electronic protection requirements in that it offers a low noise figure, and is still able to operate under elevated RF signal jamming conditions. The proposed system, when configured in a low noise figure mode, achieves an average noise figure (NF50) of 1.5 dB over 40 % bandwidth centered on the X-Band. In its high linearity mode, 10 dB improvement is achieved on the input compression point (IP1dB) measured at 9 dBm, at the price of 0.4 dB increase in noise figure. The small signal gain is greater than 18 dB and the return losses are better than -10 dB in both configurations over the complete frequency band under consideration.