Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications - Archive ouverte HAL
N°Spécial De Revue/Special Issue IEEE Transactions on Electron Devices Année : 2024

Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

Geok Ing Ng
  • Fonction : Auteur
Farid Medjdoub
Shireen Warnock
  • Fonction : Auteur
Digbijoy Nath
  • Fonction : Auteur
Jun Suda
  • Fonction : Auteur
Junxia Shi
  • Fonction : Auteur
Shyh-Chiang Shen
  • Fonction : Auteur

Dates et versions

hal-04493325 , version 1 (07-03-2024)

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Matteo Meneghini, Geok Ing Ng, Farid Medjdoub, Matteo Buffolo, Shireen Warnock, et al.. Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications. IEEE Transactions on Electron Devices, 71 (3), pp.1340-1343, 2024, ⟨10.1109/TED.2024.3359934⟩. ⟨hal-04493325⟩
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