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Poster De Conférence Année : 2019

fmax = 800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT

Résumé

In This paper, we present a high maximum frequency of oscillation (fmax) and a current-gain cutoff frequency (fT) of 800 GHz and 260 GHz respectively with pseudomorphic high-electron mobility transistor (PHEMT), using a composite, InGaAs/InAs/InGaAs channel and an asymmetric gate recess. This result was achieved with long gate length LG = 75 nm. The noise performance has been explored until 110 GHz, and gives a minimum noise figure NFmin = 0.8 dB (1.8 dB) with associated gain Gass = 16 dB (11.6 dB) at 40 GHz (94 GHz). Moreover extending the drain recess length to 225 nm and reducing the gate to source distance by 200 nm allows a fmax = 1.2 THz.
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Dates et versions

hal-04486045 , version 1 (01-03-2024)

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  • HAL Id : hal-04486045 , version 1

Citer

M. Samnouni, Nicolas Wichmann, X. Wallart, Christophe Coinon, Sylvie Lepilliet, et al.. fmax = 800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT. Compound Semiconductor Week 2019, CSW 2019, May 2019, Nara Japan, Japan. ⟨hal-04486045⟩
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