fmax = 800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT
Résumé
In This paper, we present a high maximum
frequency of oscillation (fmax) and a current-gain cutoff frequency
(fT) of 800 GHz and 260 GHz respectively with pseudomorphic
high-electron mobility transistor (PHEMT), using a composite,
InGaAs/InAs/InGaAs channel and an asymmetric gate recess.
This result was achieved with long gate length LG = 75 nm. The
noise performance has been explored until 110 GHz, and gives a
minimum noise figure NFmin = 0.8 dB (1.8 dB) with associated gain
Gass = 16 dB (11.6 dB) at 40 GHz (94 GHz). Moreover extending
the drain recess length to 225 nm and reducing the gate to source
distance by 200 nm allows a fmax = 1.2 THz.