Ultralow Read Sensitivity RFID sensor based on Tunnel Diode Voltage-Controlled Oscillator - Archive ouverte HAL Accéder directement au contenu
Proceedings/Recueil Des Communications Année : 2023

Ultralow Read Sensitivity RFID sensor based on Tunnel Diode Voltage-Controlled Oscillator

Résumé

Wireless, Batteryless technology holds unmatched potential for improving the efficiency of our societies, from identification & localization to sensing. The communications are typically asymmetric and involving a zero-energy transponder being activated by a remote Reader. Unfortunately, the communication distance is restrained by the minimum activation power (also named Read sensitivity) to commonly a dozen of meters. In this work, we combine a multistage charge pump rectenna with a ultra-low Voltage Controlled Oscillator (VCO), yielding to an unmatched power activation of -28.6 dBm (1.4μW). Under this condition, the rectifier yields in the order of 100 mV into a 100μF capacitor, which is enough to drive the VCO directly (no DC-DC involved) upon activation by a tilt switch sensor.
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Dates et versions

hal-04483072 , version 1 (29-02-2024)

Identifiants

Citer

Yero Dia, Helena Ribeiro, Laurent Oyhenart, Elie Zaraket, Jean-Luc Lachaud, et al.. Ultralow Read Sensitivity RFID sensor based on Tunnel Diode Voltage-Controlled Oscillator. 2023 IEEE International Conference on RFID Technology and Applications (RFID-TA), IEEE, pp.213-216, 2023, ⟨10.1109/RFID-TA58140.2023.10290466⟩. ⟨hal-04483072⟩
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