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Communication Dans Un Congrès Année : 2020

Novel Self-timing Speculative Writing for Unreliable STT-MRAM

Résumé

Considering the insatiable demand for emerging embedded non-volatile memory (NVM), spin-transfer torque magnetic random access memory (STT-MRAM) can be configured with high access speed, readily hybrid integration and guaranteed endurance/retention, which becomes one of the most promising candidates among different types of NVM. However, the major drawback of STT-MRAM is that high switching energy is required, accompanied with unreliable writing operation. In this work, we propose a speculative MRAM writing scheme using self-timing implementation, including speculative/ deterministic write operation and a judgment mechanism. Simulation results show that the speculative scheme can achieve 40% less writing power consumption and 50% less latency during write operation compared to standard writing method. The bit-error rate (BER) is maintained at 10 -9 without inevitable cost.
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Dates et versions

hal-04477675 , version 1 (26-02-2024)

Identifiants

Citer

Meng-Di Zhang, Hao Cai, Lirida Naviner. Novel Self-timing Speculative Writing for Unreliable STT-MRAM. 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), Nov 2020, Kunming, China. pp.1-3, ⟨10.1109/ICSICT49897.2020.9278373⟩. ⟨hal-04477675⟩
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