Stress in physical vapor deposited thin films: Measurement methods and selected examples
Résumé
This chapter presents recent advances in the assessment and understanding of residual stress in thin films produced by physical vapor deposition. Measurement methods will be critically reviewed, with main emphasis laid on in situ monitoring of the stress development during film growth using wafer curvature and ex situ characterization of the microstructure-dependent and depth-sensitive stress state using X-ray diffraction. Current trends on the intrinsic stress evolution during the early stages of growth of a variety of materials classes are examined. We highlight the importance of microstructure (grain size and texture) and deposition process parameters as enabling factors to tailor the stress state in nanostructured thin films. The role of energetic species, involved during magnetron sputtering or ion-beam–assisted deposition, on the compressive stress build-up will be also discussed.