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Article Dans Une Revue Inorganic Materials: Applied Research Année : 2018

Thermal Stability of TiZrAlN and TiZrSiN Films Formed by Reactive Magnetron Sputtering

Résumé

Quaternary TiZrAlN and TiZrSiN films with Ti : Zr ratio of ~1 : 1 and different Al (or Si) content were deposited by simultaneous reactive magnetron sputtering of Ti, Zr, and Al (or Si) targets under Ar + N2 plasma discharges. The elemental composition was determined by WDS and RBS methods; the phase composition was studied by X-ray diffraction. It was found that the c-(Ti,Zr,Al)N solid solution of substitution type is the basis of the (Ti,Zr)1–xAl x N (0.06 ≤ x ≤ 0.65) system. For the (Ti,Zr)1–xSi x N system (0.13 ≤ x ≤ 0.41), a dual-phase structure composed of a nanocomposite on the basis of the c-(Ti,Zr)N solid solution and grainboundary amorphous a-SiN y phase is typical. Appearance of the second a-SiN y phase promotes an amorphization of the films. Vacuum annealing of the films investigated at temperatures up to 1000°C does not lead to decomposition of the solid solutions which constitute the films. Both rather high deposition temperature (600°C) and stoichiometric nitrogen content can be the reasons for thermal stability of the films. Annealing-induced Al depletion of c-(Ti,Zr,Al)N solid solution grains is observed in (Ti,Zr)1–xAl x N films caused by the growth of the AlN based wurtzite phase at the grain boundaries.

Dates et versions

hal-04454629 , version 1 (13-02-2024)

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Grégory Abadias, A. Yu. Daniliuk, I. Solodukhin, V. Uglov, S. Zlotsky. Thermal Stability of TiZrAlN and TiZrSiN Films Formed by Reactive Magnetron Sputtering. Inorganic Materials: Applied Research, 2018, 9 (3), pp.418-426. ⟨10.1134/S2075113318030024⟩. ⟨hal-04454629⟩
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