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Communication Dans Un Congrès Année : 1997

Edge-coupled Waveguide InGaAs/InP Heterojunction Phototransistors

Résumé

Heterojunction Phototransistors (HPTs) are promising devices for high-performance optical fibre telecommunication systems for digital or microwaves applications at long wavelengths (1.3 and 1.55 µm). They simultaneously detect and amplify an optical signal, thus combining the functions of a PIN photodiode and a HBT. Unlike avalanche photodiodes (APD), they exhibit an internal gain owing to transistor effect without high bias voltage and excess noise due to avalanching. We present the study, the realisation and the characterisation of edge-coupled waveguide InGaAs/InP heterojunction phototransistor (unlike most of the phototransistors which are top-illuminated). Such a structure can absorb light efficiently and be used for microwave and millimetre wave applications.
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hal-04454420 , version 1 (13-02-2024)

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  • HAL Id : hal-04454420 , version 1

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Vincent Magnin, Jérôme Vandecasteele, Joseph Harari, Jean-Philippe Gouy, Sophie Maricot, et al.. Edge-coupled Waveguide InGaAs/InP Heterojunction Phototransistors. SEMICONDUCTOR AND INTEGRATED OPTOELECTRONICS (SIOE'97), University of Wales, Bangor, and Cardiff, in association with the Institute of Physics Quantum Electronics Group, Mar 1997, Cardiff, United Kingdom. ⟨hal-04454420⟩
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