Maximal Efficiencies in New Single Si 1-x Ge x- Alloy Junction Solar Cells at 300 K - Archive ouverte HAL
Article Dans Une Revue European Journal of Theoretical and Applied Sciences Année : 2024

Maximal Efficiencies in New Single Si 1-x Ge x- Alloy Junction Solar Cells at 300 K

Résumé

In single n+(p+)−p(n) [X(x)≡Si1−xGex]-alloy junction solar cells at 300 K, 0≤x≤1, by basing on the same physical model and the same treatment method, as those used in our recent work (Van Cong et al., 2023; Van Cong, 2023), we will investigate the highest (or maximal) efficiencies, ηImax.(IImax.), obtained at the open circuit voltage Voc(=VocI(ocII)), according to highest hot reservoir temperatures TH(K), obtained from the Carnot efficiency theorem, being proved by entropy law, in the following. (i)-First, in the single

Dates et versions

hal-04454326 , version 1 (13-02-2024)

Identifiants

Citer

Van-Cong Huynh. Maximal Efficiencies in New Single Si 1-x Ge x- Alloy Junction Solar Cells at 300 K. European Journal of Theoretical and Applied Sciences, 2024, 2 (1), pp.415-434. ⟨10.59324/ejtas.2024.2(1).35⟩. ⟨hal-04454326⟩

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