Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2008

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Résumé

A novel experimental set-up is developed and validated to characterize high voltage diodes in transient switching mode. Parameters extracted from DMTVCA and OCVD techniques, like ambipolar lifetime, epilayer thickness and doping level, diode area, are validated in a buck converter with resistive load. The experimental set-up allows to measure the current and voltage transient characteristics without noise and influence of high parasitic wiring. Experimental results are compared with device simulations and a good correlation is found.
Fichier non déposé

Dates et versions

hal-04452237 , version 1 (12-02-2024)

Identifiants

Citer

Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, et al.. Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies. Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩. ⟨hal-04452237⟩
7 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More