Facile collisional dissociation of N2 on a Si(111)-7x7 surface at room temperature
Résumé
We demonstrate that the strong N2 bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N2 with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the π*-antibonding orbitals of N2 that significantly weaken the N2 bond. This activated N2 triple bond dissociation on the surface leads to the formation of a Si3N interface.
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https://hal.science/hal-04452041
Soumis le : jeudi 15 février 2024-09:49:40
Dernière modification le : mercredi 29 mai 2024-22:16:54
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- HAL Id : hal-04452041 , version 1
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Ali Hamadeh, Elie Geagea, Judicaël Jeannoutot, Frank Palmino, Nicolas Breault, et al.. Facile collisional dissociation of N2 on a Si(111)-7x7 surface at room temperature. GdR Nanosciences en champ proche sous ultra-vide, Nov 2023, NANCY, France. ⟨hal-04452041⟩
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