Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy
Résumé
In this work, the electrical properties of ScAlN/GaN high electron mobility transistor (HEMT) heterostructures grown by ammonia source molecular beam epitaxy are studied. The effect of growth temperature and ScAlN barrier thickness on 2DEG carrier density is investigated with capacitance-voltage measurements. Alloyed ohmic contacts have been developed to evaluate the electron mobility and a first functional transistor is demonstrated.
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Evaluation of the electrical properties of ScAlNGaN HEMTs grown by ammonia source molecular beam epitaxy.pdf (283.01 Ko)
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