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Chapitre D'ouvrage Année : 2021

Laser ultra-doped silicon: Superconductivity and applications

Résumé

This chapter is devoted to the application of nanosecond laser annealing to the realization of superconducting silicon layers and quantum devices. Though predicted since more than 50 years, superconducting behavior in highly boron-doped Si was only discovered in 2006, leveraging the gas immersion laser doping (GILD) technique. Indeed, only a nonequilibrium technique allowed to access the boron active concentrations, well above the solubility limit, necessary to cross the superconductivity threshold. This chapter first presents the GILD fabrication method and the characteristics of the obtained superconducting Si layers. Then, this chapter focuses on the efforts made to develop the first quantum devices implementing this new material, such as superconducting quantum interference devices (SQUIDs), all-silicon Josephson junctions, or superconducting microwave resonators. Finally, the recent developments targeting the large-scale integration of superconducting silicon are presented. In this view, GILD, the historical fabrication method, is tentatively replaced by the pulsed laser-induced epitaxy (PLIE) technique, combining high-dose boron implantation and subsequent nanosecond laser annealing.
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Dates et versions

hal-04442449 , version 1 (06-02-2024)

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Francesca Chiodi, Richard Daubriac, Sébastien Kerdilès. Laser ultra-doped silicon: Superconductivity and applications. Laser Annealing Processes in Semiconductor Technology, Elsevier, pp.357-400, 2021, ⟨10.1016/B978-0-12-820255-5.00009-X⟩. ⟨hal-04442449⟩
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