Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs

Résumé

This article proposes an original method for designing Low Noise Amplifiers on wide-bandgap RF technologies. These LNAs are able to withstand high electromagnetic signals, like those used in electronic warfare, while providing high detectivity. The study presents the original design procedure of a single-stage LNA and a two-stage LNA based on the same strategy. These self-reconfigurable LNAs make it possible to switch from a high detectivity mode (low NF) to a high linearity mode (high input compression mode IP1dB). This design strategy is compared to a robust LNA design, which uses a larger transistor size for improved linearity at the cost of a slight NF degradation. RF step-stress results has been performed up to 30 dBm at the input of the amplifier without any destruction, and providing stable S-parameters and noise figure.
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hal-04440655 , version 1 (06-02-2024)

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  • HAL Id : hal-04440655 , version 1

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Jean-Guy Tartarin, Bastien Pinault, Damien Saugnon. Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs. IEEE International Conference on Noise and Fluctuations, Chistoforos Theodorou, Oct 2023, Grenoble, France. ⟨hal-04440655⟩
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