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Communication Dans Un Congrès Année : 2018

Electrical characterization of in-plane InGaAs nanostructures grown by selective molecular beam epitaxy

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hal-04440002 , version 1 (05-02-2024)

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Alexandre Bucamp, X. Wallart, Dominique Vignaud, Christophe Coinon, David Troadec, et al.. Electrical characterization of in-plane InGaAs nanostructures grown by selective molecular beam epitaxy. 20th International Conference on Molecular Beam Epitaxy (ICMBE), Sep 2018, Shanghai, China. ⟨hal-04440002⟩
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