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Communication Dans Un Congrès Année : 2022

Molecular beam epitaxial growth of 2D-boron nitride on Ni substrates

Ivy Colambo
Jose Avila
  • Fonction : Auteur
Pavel Dudin
Julien Barjon

Résumé

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. Based on spatially resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the two N and B main components and their relationship with an electronic coupling with Ni at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained although the material thickness is not homogeneous, showing triangular islands whose lateral size is limited to ~20 μm.
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Dates et versions

hal-04438264 , version 1 (05-02-2024)

Identifiants

  • HAL Id : hal-04438264 , version 1

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Jawad Hadid, Ivy Colambo, Jose Avila, Aexandre Plaud, Christophe Boyaval, et al.. Molecular beam epitaxial growth of 2D-boron nitride on Ni substrates. 22nd International Conference on Molecualr Beam Epitaxy, University of Sheffield (UK), Sep 2022, Sheffield, United Kingdom. ⟨hal-04438264⟩
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