Silicon Surface with Giant Spin Splitting - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review Letters Année : 2009

Silicon Surface with Giant Spin Splitting

Résumé

We demonstrate a giant Rashba-type spin splitting on a semiconducting substrate by means of a Bitrimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken inducing a giant spin splitting with a Rashba energy of about 140 meV, much larger than what has previously been reported for any semiconductor heterostructure. The separation of the electronic states is larger than their lifetime broadening, which has been directly observed with angular resolved photoemission spectroscopy. The experimental results are confirmed by relativistic first-principles calculations.
Fichier principal
Vignette du fichier
PhysRevLett.103.046803.pdf (593.09 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-04434723 , version 1 (02-02-2024)

Identifiants

Citer

I. Gierz, T. Suzuki, E. Frantzeskakis, Stéphane Pons, S. Ostanin, et al.. Silicon Surface with Giant Spin Splitting. Physical Review Letters, 2009, 103 (4), pp.046803. ⟨10.1103/physrevlett.103.046803⟩. ⟨hal-04434723⟩
22 Consultations
13 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More