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Article Dans Une Revue Physical Review B Année : 2024

Gap collapse and flat band induced by uniaxial strain in 1T-TaS2

Résumé

Interlayer coupling is strongly implicated in the complex electronic properties of 1T-TaS 2. Uniaxial strain engineering offers a route to modify this coupling in order to elucidate its interplay with the electronic structure and electronic correlations. Here, we employ angle-resolved photoemission spectroscopy (ARPES) to reveal the effect of uniaxial strain on the electronic structure in 1T-TaS 2. The gap of the normally insulating ground state is significantly reduced, with a correlated flat band appearing close to the Fermi level. Temperature-dependent ARPES measurements reveal that the flat band only develops below the commensurate charge density wave (CCDW) transition, where interlayer dimerization produces a band insulator in unstrained samples. Electronic structure calculations suggest that the correlated flat band is stabilized by a modified interlayer coupling of the Ta d z 2 electrons. Further hints of a strain-induced structural modification of the interlayer order are obtained from x-ray diffraction. Our combined approach provides critical input for understanding the complex phase diagram of this platform material for correlated physics.
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Origine : Publication financée par une institution
Licence : CC BY - Paternité

Dates et versions

hal-04431369 , version 1 (01-02-2024)

Identifiants

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Christopher W. Nicholson, Francesco Petocchi, Bjoern Salzmann, Catherine Witteveen, Maxime Rumo, et al.. Gap collapse and flat band induced by uniaxial strain in 1T-TaS2. Physical Review B, 2024, 109 (3), pp.035167. ⟨10.1103/physrevb.109.035167⟩. ⟨hal-04431369⟩
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