Broadband <inline-formula> <tex-math notation="LaTeX">$E$ </tex-math> </inline-formula>-Band WR12 to Microstrip Line Transition Using a Ridge Structure on High-Permittivity Thin-Film Material - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Microwave and Wireless Components Letters Année : 2018

Broadband $E$ -Band WR12 to Microstrip Line Transition Using a Ridge Structure on High-Permittivity Thin-Film Material

Résumé

A rectangular WR12 waveguide to microstrip line (MSL) transition using a very thin high-permittivity ceramic substrate (ε r = 9.9 and h = 127 μm) is presented and analyzed. The proposed configuration uses a gradually extending metal ridge over a thin-film MSL to ensure electric field transformation, and an accurate impedance matching, while maintaining a good electrical contact, without any soldering or gluing. The fabricated prototype has been successfully tested in terms of insertion and return losses. The obtained results exhibit a bandwidth of more than 37% at -10 dB with an insertion loss of 1.5-2.7 dB, over the entire 60-90-GHz frequency band. The design simplicity and suitability for high-permittivity thin-film substrates, as well as the very broadband operation capability, enable it to be easily integrated with various planar monolithic microwave integrated circuits/miniaturized hybrid microwave integrated circuits microstrip circuits for different millimeter-wave applications.
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Dates et versions

hal-04423648 , version 1 (29-01-2024)

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Citer

C. Hannachi, T. Djerafi, S. Tatu. Broadband $E$ -Band WR12 to Microstrip Line Transition Using a Ridge Structure on High-Permittivity Thin-Film Material. IEEE Microwave and Wireless Components Letters, 2018, 28 (7), pp.552-554. ⟨10.1109/LMWC.2018.2835475⟩. ⟨hal-04423648⟩
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