TUNING NEGATIVE DIFFERENTIAL RESISTANCE IN A SINGLE MOLECULE TRANSISTOR: DESIGNS OF LOGIC GATES AND EFFECTS OF VARIOUS OXYGEN-AND HYDROGEN-INDUCED DEFECTS - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Digest Journal of Nanomaterials and Biostructures Année : 2017

TUNING NEGATIVE DIFFERENTIAL RESISTANCE IN A SINGLE MOLECULE TRANSISTOR: DESIGNS OF LOGIC GATES AND EFFECTS OF VARIOUS OXYGEN-AND HYDROGEN-INDUCED DEFECTS

A Nasri
  • Fonction : Auteur
A Boubaker
  • Fonction : Auteur
W Khaldi
  • Fonction : Auteur
A Kalboussi
  • Fonction : Auteur

Résumé

In this paper, a theoretical study of Single Molecule Transistor (SMT) operating as a molecular field effect transistor (MFET) has been presented. We have applied the density functional theory (DFT) in conjugation with the non-equilibrium green's function (NEGF) formalism on a pentacene device in order to acquire the I-V characteristics. The bias voltage influence on the I-V curves of the MFET was studied using MATLAB simulator. A good agreement with numerical results was found. When applied different gate voltage, a negative differential resistance (NDR) behaviors are observed almost at the same sourcedrain voltage. We demonstrate the application of using a single pentacene molecular FET to realize five basic logic gates with just one MFET. For the first time, we have investigated the electrical properties of a pentacene-based Single Electron Transistor (MSET) using Atomistix ToolKit (ATK) a set of atomic-scale simulators, which can determine properties of nano-scale systems. We confirmed Coulomb blockade phenomena in this molecular device and its role to obtain the NDR. Finally, the effects of various oxygen-and hydrogen-induced defect have been also considered. The NDR effect, the dependence of the defects and the coulomb Staircase state has been outlined.
Fichier principal
Vignette du fichier
99_NasriA.pdf (1.23 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-04423069 , version 1 (29-01-2024)

Identifiants

  • HAL Id : hal-04423069 , version 1

Citer

A Nasri, A Boubaker, B Hafsi, W Khaldi, A Kalboussi. TUNING NEGATIVE DIFFERENTIAL RESISTANCE IN A SINGLE MOLECULE TRANSISTOR: DESIGNS OF LOGIC GATES AND EFFECTS OF VARIOUS OXYGEN-AND HYDROGEN-INDUCED DEFECTS. Digest Journal of Nanomaterials and Biostructures , 2017. ⟨hal-04423069⟩
3 Consultations
4 Téléchargements

Partager

Gmail Facebook X LinkedIn More