TUNING NEGATIVE DIFFERENTIAL RESISTANCE IN A SINGLE MOLECULE TRANSISTOR: DESIGNS OF LOGIC GATES AND EFFECTS OF VARIOUS OXYGEN-AND HYDROGEN-INDUCED DEFECTS
Résumé
In this paper, a theoretical study of Single Molecule Transistor (SMT) operating as a molecular field effect transistor (MFET) has been presented. We have applied the density functional theory (DFT) in conjugation with the non-equilibrium green's function (NEGF) formalism on a pentacene device in order to acquire the I-V characteristics. The bias voltage influence on the I-V curves of the MFET was studied using MATLAB simulator. A good agreement with numerical results was found. When applied different gate voltage, a negative differential resistance (NDR) behaviors are observed almost at the same sourcedrain voltage. We demonstrate the application of using a single pentacene molecular FET to realize five basic logic gates with just one MFET. For the first time, we have investigated the electrical properties of a pentacene-based Single Electron Transistor (MSET) using Atomistix ToolKit (ATK) a set of atomic-scale simulators, which can determine properties of nano-scale systems. We confirmed Coulomb blockade phenomena in this molecular device and its role to obtain the NDR. Finally, the effects of various oxygen-and hydrogen-induced defect have been also considered. The NDR effect, the dependence of the defects and the coulomb Staircase state has been outlined.
Mots clés
Gate logic Organic semiconductors Modelling Pentacene nano-electronic device Single molecule transistor Single electron transistor Negative differential resistance
Gate logic
Organic semiconductors
Modelling
Pentacene
nano-electronic device
Single molecule transistor
Single electron transistor
Negative differential resistance
Domaines
Physique [physics]
Origine : Fichiers éditeurs autorisés sur une archive ouverte