Method for Analysing the Crystal Structure of a Polycrystalline Semiconductor Material
Résumé
A method for analysing the crystal structure of a polycrystalline semiconductor is described. According to one embodiment, it comprises exciting the semiconductor so as to make it emit a light signal at each point of a mesh in a preset spatial zone of the semiconductor; detecting the light signal as a function of variable polarisation angle, in a frequency band the width of which is larger than or equal to the width of the bandgap of the semiconductor; estimating, at each point of the mesh in the preset spatial zone of the semiconductor, a datum characterising the modulation of the light signal, which modulation is modelled by a sum of sinusoids, as a function of polarisation angle, on the basis of the signal detected for said point of the mesh; and displaying the characterising datum on all the points of the mesh in the preset spatial zone.
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