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Article Dans Une Revue IEEE Design & Test Année : 2023

Dependable STT-MRAM With Emerging Approximation and Speculation Paradigms

Hao Cai
Yaoru Hou
  • Fonction : Auteur
Bo Liu

Résumé

Editor’s notes: STT-MRAMs are a promising candidate for nonvolatile memory (NVM), for example, for caches and implementing embedded NVM. This article proposes a design flow combining concepts of timing speculation and approximate storage to achieve a dependable operation of STT-MRAM devices. —Jürgen Teich, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU).
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Dates et versions

hal-04420922 , version 1 (27-01-2024)

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Hao Cai, Yaoru Hou, Mengdi Zhang, Bo Liu, Lirida Naviner. Dependable STT-MRAM With Emerging Approximation and Speculation Paradigms. IEEE Design & Test, 2023, 40 (3), pp.17-25. ⟨10.1109/MDAT.2021.3120330⟩. ⟨hal-04420922⟩
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