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Article Dans Une Revue IEEE Transactions on Magnetics Année : 2021

Triple Sensing Current Margin for Maintainable MRAM Yield at Sub-100% Tunnel Magnetoresistance Ratio

Hao Cai
Menglin Han
Yongliang Zhou
Bo Liu

Résumé

Spin transfer torque magnetic random access memory (STT-MRAM) creates significant breakthroughs as a proper candidate of next-generation non-volatile memory (NVM). Although STT-MRAM achieves high endurance, low access latency, and power consumption, the yield issue remains one of the critical concerns in high-density and large-scale MRAM array design. In this article, a novel triple-current margin sensing amplifier (TM-SA) is proposed for maintainable MRAM yield based on the current-mode SA and transmission gate switches. The sensing current margin of the proposed TM-SA is three times enlarged compared to traditional current mean (CM)-SA and resistance mean (RM)-SA. With a seriously degraded tunnel magnetoresistance (TMR) ratio (sub-100%, as low as 10%), the maximum voltage margin is 4.6 times of conventional CM-SA and five times of RM-SA. Monte-Carlo simulation shows that sensing failure probability can be greatly alleviated with the proposed TM-SA. The performance of TM-SA with respect to voltage margin can be further improved than that of CM-SA and RM-SA.
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Dates et versions

hal-04420918 , version 1 (27-01-2024)

Identifiants

Citer

Hao Cai, Menglin Han, Yongliang Zhou, Bo Liu, Lirida Naviner. Triple Sensing Current Margin for Maintainable MRAM Yield at Sub-100% Tunnel Magnetoresistance Ratio. IEEE Transactions on Magnetics, 2021, 57 (2), pp.1-5. ⟨10.1109/TMAG.2020.3011614⟩. ⟨hal-04420918⟩
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