Characterization of InP Surfaces Perturbations after Ar + Bombardment By Combining Electrochemistry and X-Ray Photoemission Spectroscopy - Archive ouverte HAL Accéder directement au contenu
Proceedings/Recueil Des Communications ECS Meeting Abstracts Année : 2021

Characterization of InP Surfaces Perturbations after Ar + Bombardment By Combining Electrochemistry and X-Ray Photoemission Spectroscopy

Résumé

Over the past decades, the perturbations induced by ionic bombardment on semi-conductors have been explored, raising questions such as the deepness affected inside the material. Here, we focus on one well-known semi-conductor: InP, under Ar bombardment induced by an ionic sputtering performed directly inside the X-Ray photoemission spectroscopy (XPS) chamber using an ion gun. We already proved that, after a bombardment by Ar ions, InP surfaces suffer from several perturbations, degrading the initial properties of this semi-conductor: chemical ones (oxidation degree, atomic network organization and stoichiometry) [1], but also morphological and optical ones [2]... To get a better insight on the damages induced on the surfaces of InP semi-conductors, we present a study where electrochemistry is coupled to XPS analysis. Electrochemistry is indeed a very efficient probe to detect modification of the electrical and electrochemical properties of the materials but also a quantitative tool to provide information bulk and surface properties of any electrode material. In our approach, n- & p- type samples were investigated toward their modified electrochemical responses. We observed that, on p-type InP, after bombardment, the surface modification is evidenced by a lower dark open circuit potential compared to the one measured on pristine surface. Moreover, cyclic voltammetry performed at pH 10 shows initial cathodic features on the surface, related to an oxidized metallic In-enriched layer onto InP surface. This feature agrees with XPS analysis. By continuing the cyclic voltammetry, a more pronounced In rich overlayer formation is observed, due to specific oxidation /reduction phenomenon.[3] This behavior is very similar to the one obtained by cathodic decomposition onto InP surface. We will also explore the response of a n-type InP surface under similar conditions. In conclusion, we will discuss how the XPS and electrochemical characterizations combination is able to provide complete and complementary diagnostic of the stoichiometry loss and its electrochemical reactivity. [1] Aureau et al., SIA, 2018, 50 (11) 1163-1167 ; D. Aureau et al., ECS Trans., 2019, 89, 9 [2] Béchu et al., JVST B, 2019, 27, 062902 [3] Béchu et al., Electrochem. Comm., 2020, 117, 106766

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hal-04417610 , version 1 (25-01-2024)

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Solene Bechu, Damien Aureau, Muriel Bouttemy, Mathieu Fregnaux, Anne-Marie Goncalves, et al.. Characterization of InP Surfaces Perturbations after Ar + Bombardment By Combining Electrochemistry and X-Ray Photoemission Spectroscopy. 239th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS) May 30, 2021 - June 3, 2021, ECS Meeting Abstracts, MA2021-01 (31), pp.1035-1035, 2021, ⟨10.1149/ma2021-01311035mtgabs⟩. ⟨hal-04417610⟩
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