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Communication Dans Un Congrès Année : 2023

Electro-Thermal Investigation of SiGe HBTs: A Review

Résumé

This paper presents a review on the electro-thermal investigation of SiGe HBT technologies. After introducing a simple method of measuring thermal resistance (RTH), analytical studies on the calculation of RTH is discussed and subsequently the contribution of the back-end-of-line metal lines is estimated. Based on this analysis, strategies for the optimum emitter finger placements while designing a power amplifier cell are investigated. Finally, the thermal impedance measurement and modelling aspects are discussed.
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hal-04410097 , version 1 (22-01-2024)

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Thomas Zimmer, Anjan Chakravorty, Sébastien Fregonese. Electro-Thermal Investigation of SiGe HBTs: A Review. 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Oct 2023, Monterey, United States. pp.44-49, ⟨10.1109/BCICTS54660.2023.10310701⟩. ⟨hal-04410097⟩
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