Excited-state absorption in the infrared emission domain of Nd3+-doped Y3Al5O12, YLiF4, and LaMgAl11O19 - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue (Article De Synthèse) Journal of Applied Physics Année : 1993

Excited-state absorption in the infrared emission domain of Nd3+-doped Y3Al5O12, YLiF4, and LaMgAl11O19

Résumé

Detailed excited-state excitation spectra are recorded in the infrared emission domains around 1.06 and 1.32 μm of the Nd3+-doped Y3Al5O12, YLiF4, and LaMgAl11O19 laser crystals. The positions of the observed lines are compared with that deduced from the energy levels of the Nd3+ ion in these materials.
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hal-04398562 , version 1 (16-01-2024)

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Yannick Guyot, Richard Moncorge. Excited-state absorption in the infrared emission domain of Nd3+-doped Y3Al5O12, YLiF4, and LaMgAl11O19. Journal of Applied Physics, 1993, 73 (12), pp.8526-8530. ⟨10.1063/1.353381⟩. ⟨hal-04398562⟩
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