Effects of the compliance current in the electroforming process of HfO 2 -based ReRAM devices - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Effects of the compliance current in the electroforming process of HfO 2 -based ReRAM devices

Résumé

Electroforming is the activation process of ReRAM devices that initiates the resistive switching response by creating filamentary conduction paths in the oxide film. This step is fundamental for the proper operation of the device, and it is controlled by a compliance current (I c ) that prevents the hard dielectric breakdown of the ReRAMs. In this work, we study the influence of this current during the electroforming process and operation in HfO 2 -based ReRAM devices of different areas. Some parameters from the IV curve were extracted and analyzed to understand how the process could affect the device’s performance. We found a maximum value of I c needed to form the CF independent of the area device that does not provoke significant changes in the electrical behavior.
Fichier principal
Vignette du fichier
LAEDC_2023_Final.pdf (582.44 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04396660 , version 1 (01-02-2024)

Identifiants

Citer

Silvana Guitarra, Lionel Trojman, Laurent Raymond. Effects of the compliance current in the electroforming process of HfO 2 -based ReRAM devices. 2023 IEEE Latin American Electron Devices Conference (LAEDC), Jul 2023, Puebla, France. pp.1-4, ⟨10.1109/LAEDC58183.2023.10209142⟩. ⟨hal-04396660⟩
39 Consultations
1 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More