A route towards high quality p doped layers suitable for high power electronics: Improvement of dislocation density in single crystal CVD diamond - Archive ouverte HAL
Communication Dans Un Congrès Année : 2021

A route towards high quality p doped layers suitable for high power electronics: Improvement of dislocation density in single crystal CVD diamond

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Physique [physics]

Marie-Amandine Pinault-Thaury  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-04396265

Soumis le : lundi 15 janvier 2024-21:39:39

Dernière modification le : jeudi 28 novembre 2024-10:50:14

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hal-04396265 , version 1 (15-01-2024)

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  • HAL Id : hal-04396265 , version 1

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M.A. Pinault-Thaury, Ken Axxel Castillo Arvizu, Riadh Issaoui, Fabien Bénédic, Jocelyn Achard. A route towards high quality p doped layers suitable for high power electronics: Improvement of dislocation density in single crystal CVD diamond. 31st International Conference on Diamond and Carbon Materials (ICDCM 2021), Sep 2021, On Line, France. ⟨hal-04396265⟩

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