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Communication Dans Un Congrès Année : 2010

Effects of gate stack parasitic charge on current-voltage characteristics of high-k/SiO2/Ge-channel Double-Gate MOSFETs

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hal-04393620 , version 1 (14-01-2024)

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  • HAL Id : hal-04393620 , version 1

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Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran. Effects of gate stack parasitic charge on current-voltage characteristics of high-k/SiO2/Ge-channel Double-Gate MOSFETs. 8th Symposium SiO2, Advanced Dielectrics and Related Devices (2010), Jun 2010, Varenna, Italy. ⟨hal-04393620⟩
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