Band Alignment of N- and P- Doped InP at Electrolyte and Ultra High Vacuum Junctions: Fundamental Correlation between the Open Circuit Potential Under Illumination and XPS Photopeak Energy - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Band Alignment of N- and P- Doped InP at Electrolyte and Ultra High Vacuum Junctions: Fundamental Correlation between the Open Circuit Potential Under Illumination and XPS Photopeak Energy

Domaines

Chimie
Fichier non déposé

Dates et versions

hal-04391189 , version 1 (12-01-2024)

Identifiants

  • HAL Id : hal-04391189 , version 1

Citer

C. Rakotoarimanana P., M. Frégnaux, N. Simon, A. Etcheberry. Band Alignment of N- and P- Doped InP at Electrolyte and Ultra High Vacuum Junctions: Fundamental Correlation between the Open Circuit Potential Under Illumination and XPS Photopeak Energy. 235th ECS Meeting, Dallas (26/05-31/05 2019), 235th ECS Meeting, Dallas (26/05-31/05 2019), May 2019, Dallas (USA), United States. ⟨hal-04391189⟩
15 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More