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Article Dans Une Revue CrystEngComm Année : 2022

Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence

Résumé

Crystalline GaN nanoarrays with good alignment and strong UV luminescence have been homoepitaxially grown on a [0001]-oriented GaN substrate due to their superior lattice and thermal conductivity matching with the beneath GaN substrate (see figure).
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Dates et versions

hal-04387374 , version 1 (11-01-2024)

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Baodan Liu, Qingyun Liu, Wenjin Yang, Jing Li, Christophe Labbé, et al.. Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence. CrystEngComm, 2022, 24 (13), pp.2472-2478. ⟨10.1039/d1ce01519b⟩. ⟨hal-04387374⟩
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