Design of a multi-standard IR-UWB emitter in a 28 nm FD-SOI technology based on the frequency transposition pulse synthesis - Archive ouverte HAL
Article Dans Une Revue Journal of Integrated Circuits and Systems Année : 2023

Design of a multi-standard IR-UWB emitter in a 28 nm FD-SOI technology based on the frequency transposition pulse synthesis

Résumé

Ultra-WideBand Impulse Radio (IR-UWB) is a wireless communication technology well-suited for short range communications (about 10 meters) and has the advantage to allow real-time location with a precision of 5 cm. However, its use has been standardized in some standards and especially in the IEEE 802.15.4 dedicated to Wireless Personnal Area Net-work (WPAN) and in the IEEE 802.15.6 dedicated to Wireless Body Area Network (WBAN). After presenting requirements of each standard and a literature survey on the IR-UWB emitter, the design of a multi-standard IR-emitter based on the frequency transposition pulse synthesis is proposed in a 28 nm FD-SOI technology. The proposed design has been validated at the transistor level using electrical simulations which take into account the parasitic capacitance at each critical node of the circuit. Moreover, results show that the proposed circuit has the potential to be the first multi-standard IR-UWB emitter which covers every channel of the IEEE 802.15.4 and 802.15.6 standards.

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hal-04385307 , version 1 (10-01-2024)

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Felipe Artemio Schoulten, Rémy Vauché, Jean Gaubert, Sylvain Bourdel, André Augusto Mariano. Design of a multi-standard IR-UWB emitter in a 28 nm FD-SOI technology based on the frequency transposition pulse synthesis. Journal of Integrated Circuits and Systems, 2023, 18 (3), pp.1-11. ⟨10.29292/jics.v18i3.793⟩. ⟨hal-04385307⟩
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